v ceo 300 v v cbo 300 v v ebo 6.0 v i c 500 ma total device dissipation t a = 25 o c junction and storage temperature description data sheet npn epitaxial planar transistor MPSA42 ratings maximum ratings collector - emitter voltage collector - base voltage emitter - base voltage collector current symbol value units p d 625 mw t j , t stg -55 to 150 o c mechanical dimensions electrical characteristics @ 25 o c characteristic symbol min max unit collector - emitter breakdown voltage (i c = 1.0ma) collector - base breakdown voltage (i c = 100 m a) emitter - base breakdown voltage (i e = 10 m a) collector cutoff current (v cb = 260v, i e = 0) emitter cutoff current (v eb = 6.0v, i c = 0) dc current gain (i c = 1.0 ma, v ce = 10 v) (i c = 10 ma, v ce = 10 v) (i c = 30 ma, v ce = 10 v) collector - emitter saturation voltage (i c = 20 ma, i b = 2.0 ma) base - emitter saturation voltage (i c = 20 ma, i b = 2.0 ma) current - gain - bandwidth product (i c = 10 ma, v ce = 20 v, f = 100 mhz) output capacitance (v cb = 20 v, f = 1.0 mhz) v br(ceo) 300 --- v v br(cbo) 300 --- v v br(ebo) 6.0 --- v i cbo --- 0.1 m a i ebo --- 0.1 m a h fe --- 25 --- 40 --- 40 --- v ce(sat) mv --- 350 v be(sat) mv --- 900 f t 50 --- mhz c ob --- 3.0 pf to-92 classification of rank rank hfe1 hfe2 hfe3 v ce(sat) ns >80 >120 >120 <200mv n >25 >40 >40 <350mv
data sheet MPSA42 npn epitaxial planar transistor
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